APTGF30H60T1G APTGF30H60T1G ? rev 0 august, 2007 www.microsemi.com 1 ? 6 q3 q4 1 2 9 q2 q1 6 4 11 8 10 12 cr2 cr1 3 7 5 ntc cr4 cr3 pins 3/4 must be shorted together absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 42 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 140 w rbsoa reverse bias safe operating area t j = 125c 60a@500v these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 100 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge n pt igbt power module v ces = 600v i c = 30a @ tc = 80c
APTGF30H60T1G APTGF30H60T1G ? rev 0 august, 2007 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 500 a t j = 25c 1.7 2.0 2.45 v ce(on) collector emitter on voltage v ge =15v i c = 30a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 4 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1350 c oes output capacitance 193 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 120 pf q g total gate charge 99 q ge gate ? emitter charge 10 q gc gate ? collector charge v ge = 15v v bus = 300v i c =30a 60 nc t d(on) turn-on delay time 30 t r rise time 12 t d(off) turn-off delay time 80 t f fall time inductive switching (25c) v ge = 15v v bus = 400v i c = 30a r g = 6.8 ? 15 ns t d(on) turn-on delay time 32 t r rise time 12 t d(off) turn-off delay time 90 t f fall time inductive switching (125c) v ge = 15v v bus = 400v i c = 30a r g = 6.8 ? 21 ns e on turn-on switching energy t j = 125c 0.3 e off turn-off switching energy v ge = 15v v bus = 400v i c = 30a r g = 6.8 ? t j = 125c 0.8 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 25 a i f = 25a 1.8 2.2 i f = 50a 2.2 v f diode forward voltage i f = 25a t j = 125c 1.6 v t j = 25c 30 t rr reverse recovery time t j = 125c 175 ns t j = 25c 55 q rr reverse recovery charge i f = 25a v r = 400v di/dt =200a/s t j = 125c 485 nc
APTGF30H60T1G APTGF30H60T1G ? rev 0 august, 2007 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.9 r thjc junction to case thermal resistance diode 1.4 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 80 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGF30H60T1G APTGF30H60T1G ? rev 0 august, 2007 www.microsemi.com 4 ? 6 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 20 40 60 80 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =25c t j =125c 0 20 40 60 80 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle ic=60a ic=30a ic=15a 0 1 2 3 4 5 6 7 8 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle ic=60a ic=30a ic=15a 0 1 2 3 4 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.80 0.90 1.00 1.10 1.20 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 20406080100120 gate charge (nc) v ge , gate to emitter voltage (v) i c = 30a t j = 25c output characteristics (v ge =10v) t j =25c t j =125c 0 12.5 25 37.5 50 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle
APTGF30H60T1G APTGF30H60T1G ? rev 0 august, 2007 www.microsemi.com 5 ? 6 v ge = 15v 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 125c v ce = 400v r g = 6.8 ? v ge =15v, t j =25c v ge =15v, t j =125c 25 50 75 100 125 0 10 20 30 40 50 60 70 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 6.8 ? v ge =15v, t j =125c 0 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 6.8 ? t j = 25c t j = 125c 0 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 6.8 ? t j =125c, v ge =15v 0 0.25 0.5 0.75 1 0 10203040506070 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector current v ce = 400v r g = 6.8 ? t j = 125c 0 0.5 1 1.5 2 0 10203040506070 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15v r g = 6.8 ? eon, 30a eoff, 30a 0 0.25 0.5 0.75 1 0 5 10 15 20 25 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v)
APTGF30H60T1G APTGF30H60T1G ? rev 0 august, 2007 www.microsemi.com 6 ? 6 cies cres coes 10 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current hard switching zcs zvs 0 40 80 120 160 200 240 280 0 1020304050 i c , collector current (a) f max , operating frequency (khz) v ce = 400v d = 50% r g = 6.8 ? t j = 125c t c = 75c microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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